Imagine trying to send a huge amount of data through the air, but the signal fades away almost instantly. This project creates a 'booster' using ultra-thin, 2D materials that act like a megaphone for Terahertz waves. It fills a missing gap in signal strength that previously made these high-speed connections impractical for real-world use.
Current Terahertz emitters suffer from an exponential drop in power in the 0.5-3 THz range, making them too weak for commercial free-space communication, sensing, and imaging.
A plasmon-driven amplification system using 2D materials (TMDs, TMMs, and graphene) integrated into SiGe THz arrays via microtransfer printing.
If you are a network provider dealing with the need for higher bandwidths and high bit-rate communication—this project developed plasmon-driven amplification that overcomes atmospheric attenuation in the 0.5-3 THz range. This allows for reliable point-to-multi-point free-space communication.
If you are an imaging company dealing with low power levels in semiconductor THz emitters—this project developed a 2D material amplifier integrated into BiCMOS lines. This provides the necessary output power to make high-resolution THz sensing and imaging commercially viable.
If you are a chip maker dealing with the difficulty of integrating new materials into existing production—this project developed a microtransfer printing method to integrate 2D materials into a BiCMOS pilot line. This enables the mass production of SiGe-based THz arrays.
Based on available project data, specific unit costs or pricing models are not provided; however, the project is integrated into a BiCMOS pilot line to facilitate production.
Yes, the project utilizes microtransfer printing (μTP) technologies to integrate the amplification method into a BiCMOS pilot line for production.
Based on available project data, specific licensing terms are not disclosed, but the project is coordinated by Thales with a consortium of 9 partners.
The technology is designed to be incorporated into existing state-of-the-art Silicon-Germanium (SiGe) hetero junction bipolar (HBT) based THz arrays.
The project period runs from 2023-04-01 to 2026-09-30, suggesting a transition toward commercial viability by late 2026.
The consortium is highly balanced for technology transfer, featuring a 33% industry ratio with 3 industrial partners, including the coordinator Thales. With 9 partners across 6 countries, the group combines the academic depth of 2 universities and 4 research institutes with the manufacturing capability of an SME and large-scale industry, specifically targeting the transition from 2D material research to BiCMOS production lines.
Contact Thales (France) regarding the BiCMOS pilot line integration
Request detailed technical specs on the 0.5-3 THz amplification results
