Imagine if the 'brains' of our wireless devices were made of a rare, expensive material that only a few people could afford. This project finds a way to layer that high-performance material onto cheap, common silicon, like putting a thin skin of gold over a plastic mold. This makes the high-speed tech affordable and easy to mass-produce for everyone's gadgets.
Indium Phosphide (InP) is essential for high-frequency 6G and sensing but is too expensive and scarce for mass markets. This prevents the transition from niche applications to wide-scale commercial use.
A scalable InP-on-silicon (InPoSi) platform including 100mm, 150mm, and 200mm substrates, a 300mm MOCVD reactor prototype, and validated HBT/HEMT device stacks.
If you are a network operator dealing with the bandwidth limits of current 5G hardware — this project developed InPoSi substrates that enable sub-THz frequency operation. This allows for significantly faster data connectivity and higher capacity in urban hubs.
If you are a sensor company dealing with low resolution in imaging and sensing — this project developed HBT and HEMT devices on a sustainable platform. This provides the high-frequency performance needed for advanced industrial imaging.
If you are a chip designer dealing with the high cost of Indium Phosphide substrates — this project developed a 200mm InPoSi process. This allows you to use standard CMOS manufacturing capacities to lower production costs.
It replaces costly and scarce bulk InP substrates with InP-on-silicon (InPoSi), which is compatible with existing high-volume CMOS manufacturing capacities.
The project has developed 100mm and 150mm InPoSi substrates, and has realized a 200mm InPoSi version combining tiling and Smart Cut processes.
Based on available project data, the technological developments have resulted in 7 patents.
The InPoSi global standard is designed to be compatible with CMOS manufacturing capacities, allowing for easier upscaling of wafer size and volume.
The project runs from 2024-06-01 to 2027-05-31, with initial substrate and device prototypes already developed in the first period.
The consortium is heavily industry-driven with 16 industrial partners (57% ratio), including 9 SMEs. Led by Soitec SA, the group spans 7 countries, indicating a strong commercial focus on creating a European value chain from material production to final application.
Contact SOITEC SA regarding InPoSi substrate licensing
Contact us to connect with the Move2THz consortium for early adoption of InPoSi technology.
