Imagine trying to move a layer of atoms as thin as a piece of cling wrap from one surface to another without tearing it or using messy chemicals. Currently, this is a slow, multi-step process involving acids and solvents. This technology uses a laser to 'print' these ultra-thin materials directly onto chips in one clean step. It's like switching from hand-painting a canvas to using a high-precision digital printer.
Current 2D material transfer is a slow, multi-step process using toxic solvents and sacrificial layers, which limits the scalability and purity of silicon photonics and CMOS integration.
A laser-based, single-step digital transfer system for 2D materials. It enables the placement of graphene and other 2D materials onto silicon and flexible substrates at wafer scale.
If you are a chip maker dealing with the difficulty of integrating 2D materials onto silicon dies — this project developed a laser digital transfer technique that enables direct emission and wafer-scale integration. This removes the need for organic solvents and multiple etching steps. It allows for the creation of on-chip Si emitters.
If you are a fabricator dealing with the low yield of chemical vapor deposition transfer processes — this project developed a green, single-step printing solution. It supports 8-inch scale production of industrial grade graphene. This reduces chemical waste and processing time.
If you are a hardware developer dealing with the challenge of placing high-quality 2D materials on flexible polymer substrates — this project developed a laser transfer method with lateral resolution down to 10 μm. This allows for precise, digital placement of materials like MoTe2 and WS2. It enables high-performance electronics on non-rigid surfaces.
The project aims to upscale graphene and other 2D materials to an 8-inch scale at industrial grade quality.
It replaces a multi-step process involving sacrificial polymers and organic solvents with a single-step, green, and solvent-free laser printing solution.
The project builds on IP from LEAF-2D and intends to create a spin-out company to secure foreground IP and pursue strategic corporate agreements with leading graphene and Si photonics companies.
The technology supports graphene, hBN, MoTe2, and WS2.
Based on available project data, the consortium demonstrated lateral resolution down to 10 μm on 3-inch wafers.
The consortium is heavily weighted toward commercialization with a 60% industry ratio, consisting of 3 industrial partners (including 2 SMEs) and 2 universities. This structure, led by the National Technical University of Athens (ETHNICON METSOVION POLYTECHNION), suggests a strong push to move the technology from a lab environment to a fab-ready product via a planned spin-out.
Contact ETHNICON METSOVION POLYTECHNION regarding the L2D2 spin-out and IP licensing.
Contact us to connect with the L2D2 consortium for early adoption of laser-based 2D material transfer.
