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HIGH-MEMO · Project

Ultra-Fast Memory Chips to Boost Cloud Computing and IoT Battery Life

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Imagine the memory in your device is like a narrow hallway that slows down the rest of the computer. This project built a wider, faster hallway that lets data move much quicker. It also acts like a smart light switch, turning off power when not in use so your battery lasts way longer.

By the numbers
70-90%
reduction in idle energy consumption for IoT
2-3x
increase in memory speed
30%
reduction in energy consumption for high-performance apps
€280 billion
annual high-speed computing market value
The business problem

What needed solving

SRAM acts as a bottleneck in electronics, causing excessive power drain in idle IoT devices and limiting the processing speed of data centers and telecom infrastructure.

The solution

What was built

A UHS SRAM compiler and a High-Speed Turbo (HSTB) memory product line, both validated via a fabricated FinFET test chip.

Audience

Who needs this

Semiconductor companiesCloud computing hardware designersIoT device manufacturersTelecom infrastructure engineers
Business applications

Who can put this to work

Cloud Infrastructure
enterprise
Target: Data center operator

If you are a data center operator dealing with processor bottlenecks and high energy costs — this project developed UHS SRAM that can reach 2-3x higher speed and reduce energy consumption by 30%. This allows for unprecedented cloud-computing performance.

Internet of Things (IoT)
any
Target: Wearable device manufacturer

If you are a wearable device manufacturer dealing with short battery life due to idle power drain — this project developed SRAM that reduces energy consumption by 70-90% when the device is idle.

Telecommunications
enterprise
Target: 5G infrastructure provider

If you are a 5G infrastructure provider dealing with data processing limits in your hardware — this project developed a High-Speed Turbo (HSTB) memory line optimized for large, high-speed sequential data access.

Frequently asked

Quick answers

What is the pricing or cost model for this technology?

Xenergic provides customers with SRAM design IP tailored to their requirements and generates revenue through royalties on the resulting sales.

Is this technology ready for industrial scale?

Yes, the project involved the design and fabrication of a test chip using advanced FinFET technology to validate performance under real-world conditions for wide-scale adoption.

How is the Intellectual Property (IP) handled?

The company licenses its Ultra-High-Speed (UHS) SRAM IP to semiconductor companies to be integrated into their system-on-chip (SoC) designs.

How does this integrate into existing hardware?

The technology is delivered as a compiler and IP blocks designed for advanced FinFET process nodes, allowing it to be embedded directly into SoC designs.

What is the timeline for market availability?

Based on available project data, the project ran from 2022 to 2024 to make these memories market-ready through silicon validation.

Consortium

Who built it

The project was executed by a single partner, XENERGIC AB, a Swedish SME. This lean structure indicates a highly focused internal development cycle where the company maintains 100% control over the IP and industrial implementation.

How to reach the team

Contact XENERGIC AB in Sweden for IP licensing inquiries

Next steps

Talk to the team behind this work.

Contact us to find integration partners for high-speed SRAM IP.