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Fe-NVRAM · Project

High-Speed Non-Volatile Memory to Reduce Data Center Energy and Boost Device Battery Life

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Imagine if your computer's short-term memory didn't forget everything the moment the power went out, but stayed as fast as it is now. This technology replaces a standard part in memory chips with a special material that holds onto data without needing constant electricity. It's like having a notebook that writes as fast as a whiteboard but saves the information permanently without needing a battery.

By the numbers
150B$
Global semiconductor memory market size
2x
In-memory database performance boost
1.9x
Memory-buffer database performance improvement
1000%
Customer return-on-investment for AI training loads
The business problem

What needed solving

Europe lacks semiconductor memory manufacturers, creating a critical dependence on overseas suppliers for a 150B$ market. Current memories also consume high energy due to the need for constant data refreshing.

The solution

What was built

A DRAM DDR-4 core memory design that replaces dielectric capacitors with ferroelectric layers to achieve non-volatility.

Audience

Who needs this

Data center operatorsSmartphone manufacturersIoT device developersAI infrastructure companiesPC hardware manufacturers
Business applications

Who can put this to work

Cloud Computing
enterprise
Target: Data Center Operator

If you are a data center operator dealing with massive energy bills and slow data traffic between DRAM and NAND—this project developed FE-nvRAM that can boost in-memory database performance by 2x and memory-buffer performance by 1.9x.

Consumer Electronics
enterprise
Target: Smartphone Manufacturer

If you are a smartphone manufacturer dealing with short battery life—this project developed a non-volatile memory that can double the battery life of mobile phones and enable instant-on capabilities.

Artificial Intelligence
any
Target: AI Infrastructure Provider

If you are an AI provider dealing with unreliable training loads and high power consumption—this project developed a memory core that allows AI training loads to run faster and more reliably, yielding a customer ROI of more than 1000%.

Frequently asked

Quick answers

How does this affect the cost of memory production?

Based on available project data, the memory is designed to be as low-cost as standard DRAM while adding non-volatility.

Is this technology ready for industrial scale production?

The project's vision is to set up production facilities in Europe to become a major memory player and an EIC unicorn.

What is the IP or licensing status of the material innovation?

Based on available project data, the technology is based on a disruptive material innovation using ferroelectric layers in the DRAM capacitor, though specific licensing terms are not listed.

How does this integrate with existing hardware standards?

The project has specifically developed a DRAM DDR-4 core memory design using FE-nvRAM technology.

What is the expected timeline for market impact?

The project period runs from 2024-04-01 to 2025-09-30, with the goal of impacting data center performance soon.

Consortium

Who built it

The project is led by a single German SME, Ferroelectric Memory GmbH. With a 100% industry ratio and no university or research partners, the consortium is lean and focused entirely on commercialization and industrial application rather than academic research.

How to reach the team

Contact Ferroelectric Memory GmbH in Germany

Next steps

Talk to the team behind this work.

Contact us to explore licensing or partnership opportunities with this EU-based memory disruptor.