SciTransfer
ALL2GaN · Project

Affordable Smart Gallium Nitride Chips for High-Efficiency Power and Radio Electronics

energyTestedTRL 5

Imagine replacing old, bulky power switches with tiny, super-efficient ones that don't waste energy as heat. This project creates a 'toolbox' of advanced materials and designs to make these chips cheaper and more reliable. It's like upgrading the electrical plumbing of a city to stop leaks and save massive amounts of electricity.

By the numbers
30%
Average loss reduction across Use Cases
86 TWh
Long-term loss reduction in EU
43 Megatons
CO2 saved per year in EU
218 Megatons
CO2 saved per year worldwide
40%
Reduction in cycle time for 100V buffer stack
The business problem

What needed solving

Current power electronics suffer from energy waste and bulky designs. There is a need for affordable, high-performance Gallium Nitride (GaN) chips that can be integrated easily into industrial and consumer products to meet climate neutrality goals.

The solution

What was built

A 'smart GaN Integration Toolbox' consisting of high-performance GaN devices (≤100V and ≥650V), RF GaN on Si concepts, and advanced packaging solutions.

Audience

Who needs this

Power supply manufacturersEV charger developersRF amplifier designersIndustrial inverter producersConsumer electronics OEMs
Business applications

Who can put this to work

Consumer Electronics
enterprise
Target: Power adapter and charger manufacturer

If you are a charger manufacturer dealing with bulky designs and heat loss — this project developed smart GaN IC solutions for ≤100V that reduce energy loss by an average of 30%. This allows for smaller, cooler, and more efficient power bricks.

Telecommunications
enterprise
Target: 5G infrastructure provider

If you are a network provider dealing with high energy costs for radio towers — this project developed RF GaN on Si integration concepts. This improves the cost and technical performance of radiofrequency switches to lower operational expenses.

Industrial Automation
mid-size
Target: Industrial power converter OEM

If you are an OEM dealing with efficiency losses in high-voltage systems — this project developed benchmark solutions for lateral GaN devices ≥650V. This leads to a 30% average loss reduction in power conversion use cases.

Frequently asked

Quick answers

How does this affect the cost of GaN components?

The project focuses on 'affordable' solutions and 'best technical and cost performance' for RF GaN on Si to make these high-efficiency chips commercially viable.

Is this technology ready for industrial scale?

Yes, the project involves 27 industry partners and aims to provide an 'Integration Toolbox' to serve as the backbone for the European Power Electronics Industry.

What is the IP or licensing strategy?

Based on available project data, the project focuses on road-mapping for long-term exploitation and business cases to ensure European leadership.

How does this integrate into existing systems?

The project specifically addresses packaging limits and provides integrated solutions to ensure the shortest time-to-market for components and modules.

What is the timeline for deployment?

The project runs from May 2023 to October 2026, with a focus on reducing cycle times, such as a 40% reduction for 100V buffer stacks.

Consortium

Who built it

The consortium is heavily industry-driven, with 27 industrial partners (57% of the group) including 12 SMEs. This strong commercial presence, led by Infineon Technologies Austria AG and supported by 12 universities and 8 research centers across 12 countries, indicates a high priority on commercial viability and industrial application rather than just academic research.

How to reach the team

Contact Infineon Technologies Austria AG regarding the GaN Integration Toolbox

Next steps

Talk to the team behind this work.

Contact us to identify the specific GaN IC benchmarks applicable to your hardware roadmap.