Imagine the electrical switches in a power grid as faucets. Standard silicon switches are like old, bulky valves that leak energy and take up too much space. This project creates a new material called Silicon Carbide that acts like a high-performance, compact valve, allowing electricity to flow more efficiently with much less waste.
High-voltage Silicon Carbide (SiC) devices are currently too expensive for widespread use in energy grids. This cost barrier prevents the adoption of smaller, more efficient converter stations for wind and solar energy.
Developed 3.3kV and 6.5kV SiC MOSFETs, a specialized gate driver circuit, and a Half Bridge Power Module design with optimized thermal cooling.
If you are a turbine manufacturer dealing with bulky and expensive converter stations — this project developed high-voltage SiC MOSFETs that reduce die costs by 20%. This allows for smaller converter footprints and lower overall system costs.
If you are an inverter producer dealing with high energy losses in large-scale plants — this project developed 3.3kV and 6.5kV devices. These improvements help lower the Levelized Cost of Energy (LCoE) for solar installations.
If you are a grid supplier dealing with slow or inefficient circuit breakers in DC stations — this project developed solid-state circuit breakers (SSCBs). These use SiC technology to handle fast transients more reliably than traditional silicon-based IGBTs.
The project reduced SiC MOSFET die costs by approximately 20% through advanced design structures and process optimizations. It also cut epitaxial process cycle time by 25%.
Based on available project data, the project has completed the design of a Half Bridge Power Module and conducted thermal simulations to ensure scalability and commercial readiness.
Based on available project data, the project focuses on providing industrial leadership in emerging technologies to European SMEs and start-ups, though specific licensing terms are not listed.
The project developed a specific gate driver circuit to ensure reliable and precise switching performance for the MOSFETs in high-voltage applications.
The project period runs from 2023-01-01 to 2026-09-30, indicating that final validation and commercial readiness are targeted for late 2026.
The consortium is heavily industry-driven with a 64% industry ratio, comprising 9 industrial partners, 3 universities, and 2 research centers across 6 countries. This strong industrial presence, including 3 SMEs, suggests the project is focused on commercial viability and direct market application rather than pure academic research.
Contact IKERLAN S. COOP in Spain for technical specifications on SiC MOSFETs.
Contact us to connect with the AdvanSiC consortium for technology transfer opportunities.
