SciTransfer
Organization

SOITEC BELGIUM NV

Belgian SME specializing in GaN-on-Silicon epitaxial wafers for power electronics and high-frequency semiconductor applications.

Technology SMEdigitalBESMENo active H2020 projects
H2020 projects
5
As coordinator
0
Total EC funding
€2.6M
Unique partners
85
What they do

Their core work

Soitec Belgium (operating as Epigan) specializes in growing gallium nitride (GaN) epitaxial wafers on silicon substrates for power electronics and high-frequency applications. They serve as a material and process supplier within European semiconductor pilot lines, providing the GaN-on-Si layers that enable compact, efficient power devices. Their work sits at the critical junction between advanced materials research and industrial-scale semiconductor manufacturing, making them a key enabler for Europe's wide band gap semiconductor supply chain.

Core expertise

What they specialise in

GaN-on-Silicon epitaxial growthprimary
5 projects

All five H2020 projects (PowerBase, InRel-NPower, GaNonCMOS, SERENA, YESvGaN) center on GaN material development and integration.

Power semiconductor device substratesprimary
4 projects

PowerBase, InRel-NPower, GaNonCMOS, and YESvGaN all target power electronics applications from compact converters to wide band gap transistors.

mm-wave and RF semiconductor platformssecondary
1 project

SERENA focused on GaN-on-Silicon for millimeter-wave European system integration, extending their material expertise into high-frequency domains.

Vertical GaN device architecturesemerging
1 project

YESvGaN (2021-2024) specifically targets vertical GaN structures, a next-generation device geometry for higher voltage and efficiency.

Evolution & trajectory

How they've shifted over time

Early focus
GaN pilot line manufacturing
Recent focus
Vertical GaN power devices

Early projects (2015-2018) focused on establishing GaN pilot lines, developing base substrate materials, and demonstrating compact power applications — essentially proving that GaN-on-Si could be manufactured at scale. From 2018 onward, the focus shifted toward more advanced architectures: integrating GaN with CMOS, mm-wave applications, and most recently vertical GaN structures that promise silicon-level cost with wide band gap performance. The trajectory shows a clear move from process validation toward next-generation device geometries and system-level integration.

Moving from lateral GaN process development toward vertical GaN architectures and system-level integration, positioning for the next wave of European power semiconductor manufacturing.

Collaboration profile

How they like to work

Role: specialist_contributorReach: European15 countries collaborated

Soitec Belgium operates exclusively as a participant, never leading projects — consistent with their role as a specialized material supplier rather than a systems integrator. With 85 unique partners across 15 countries in just 5 projects, they work in large European consortia typical of semiconductor pilot line initiatives. This broad network signals they are a trusted, well-connected material provider that multiple research groups and industrial partners rely on for GaN epitaxy.

With 85 unique partners across 15 countries from only 5 projects, they are embedded in Europe's major semiconductor research consortia. Their network spans the full GaN value chain from equipment suppliers to device integrators and end-application developers.

Why partner with them

What sets them apart

As one of very few European companies offering commercial GaN-on-Silicon epitaxial wafers, Soitec Belgium fills a critical supply chain gap for power and RF semiconductor development. Their consistent participation across all major EU GaN pilot line projects from 2015-2024 makes them an almost unavoidable partner for any European consortium working on wide band gap semiconductors. For a consortium builder, they bring both the material capability and the established network connections to anchor a GaN-focused proposal.

Notable projects

Highlights from their portfolio

  • InRel-NPower
    Largest single EC contribution (EUR 744,980), focused on reliability of GaN power devices — a key barrier to commercial adoption.
  • YESvGaN
    Most recent project targeting vertical GaN on silicon, representing the frontier of cost-competitive wide band gap power electronics.
  • PowerBase
    Earliest project establishing GaN pilot line capabilities, laying the foundation for all subsequent work in the portfolio.
Cross-sector capabilities
Power electronics for electric vehicles and transportEnergy conversion and renewable energy invertersTelecommunications and 5G mm-wave infrastructureIndustrial automation and compact power supplies
Analysis note: Strong coherence across all 5 projects makes the profile high-confidence despite moderate project count. The company rebranded from Epigan to Soitec Belgium after acquisition by Soitec SA (France), which may affect current operations and strategic direction beyond what H2020 data shows.