Core contributor to both CHALLENGE (3C-SiC hetero-epitaxy) and REACTION (Europe's first 8-inch SiC pilot line).
L.P.E. SPA
Italian SME building epitaxial growth equipment for silicon carbide power semiconductors, active in Europe's SiC pilot line scale-up.
Their core work
L.P.E. is an Italian SME specializing in epitaxial growth equipment for the semiconductor industry, with a strong focus on silicon carbide (SiC) technology. They design and manufacture reactors used to grow thin crystalline layers on semiconductor wafers — a critical step in producing power electronics and advanced chips. Their H2020 work centers on scaling SiC epitaxy to larger wafer sizes (up to 8 inches) and enabling next-generation power devices such as MOSFETs, positioning them as a key equipment supplier in Europe's push for semiconductor sovereignty.
What they specialise in
Involved in R2POWER300 (300mm BCD smart power), CHALLENGE (SiC power devices/MOSFETs), and REACTION (SiC pilot line).
Participated in SemI40, focused on smart manufacturing and industrial internet for power semiconductor production.
R2POWER300 targeted 300mm extension; REACTION built Europe's first 8-inch SiC pilot line — both address wafer diameter scaling.
How they've shifted over time
L.P.E.'s early H2020 involvement (2015–2016) focused broadly on smart manufacturing and Industry 4.0 applied to semiconductor production, alongside conventional silicon wafer scaling (300mm BCD). From 2017 onward, their work shifted decisively toward silicon carbide — first on fundamental SiC growth techniques (hetero-epitaxy, bulk growth) and then on industrial-scale SiC pilot lines at 8-inch diameter. This trajectory mirrors the wider European strategic push to build domestic SiC supply chains for electric vehicles and renewable energy power electronics.
L.P.E. is moving from general semiconductor equipment toward becoming a specialized SiC epitaxy equipment provider at industrial scale — a market expected to grow rapidly with EV and energy transition demand.
How they like to work
L.P.E. operates exclusively as a consortium participant, never as coordinator, which is typical for a specialized equipment SME contributing domain-specific hardware expertise to larger initiatives. With 87 unique partners across 19 countries, they plug into large European consortia (ECSEL-type joint undertaking projects often have 30+ partners). This makes them an accessible, low-friction partner — experienced in large multi-national projects but without the overhead of leading them.
L.P.E. has built a broad European network of 87 partners across 19 countries, largely through large ECSEL and Innovation Action consortia in the semiconductor sector. Their connections span major European chip manufacturers, research institutes, and equipment suppliers.
What sets them apart
L.P.E. is one of very few European SMEs that designs and builds epitaxial reactors specifically for silicon carbide — a niche but strategically critical capability as Europe races to reduce dependence on Asian SiC supply chains. Their progression from silicon to SiC epitaxy, combined with involvement in Europe's first 8-inch SiC pilot line (REACTION), gives them hands-on experience at the frontier of SiC wafer scaling. For any consortium needing epitaxy equipment expertise for wide-bandgap semiconductors, L.P.E. brings both the hardware and the project track record.
Highlights from their portfolio
- REACTIONEurope's first 8-inch SiC pilot line — L.P.E.'s largest grant (EUR 1.25M) and strategically significant for European semiconductor independence.
- CHALLENGETackled fundamental SiC hetero-epitaxy on silicon substrates and SiC MOSFET reliability — directly advancing L.P.E.'s core epitaxy technology.
- SemI40Large ECSEL flagship on Industry 4.0 for semiconductor manufacturing, connecting L.P.E. to Europe's major chip production ecosystem.