ION BEAM SERVICES

Their core work

Ion Beam Services (IBS) is a French SME specializing in ion implantation technology for semiconductor manufacturing — the critical process step where atoms are embedded into silicon wafers to control their electrical properties. Based in Rousset, at the heart of France's microelectronics cluster, they supply ion implantation equipment and process services to semiconductor fabs and research facilities. Their H2020 participation spans the full semiconductor value chain, from advanced CMOS node development (down to 2nm) to wide bandgap power devices (SiC, GaN) and photovoltaic cell manufacturing.

What they specialise in

How they've shifted over time

IBS entered H2020 with a broad scope: power semiconductor manufacturing (GreenDiamond, SemI40), silicon carbide device development (CHALLENGE), and early advanced-node work (TAKEMI5). From 2018 onward, their focus sharpened dramatically toward sub-5nm CMOS pilotlines (TAPES3, PIN3S, IT2) while simultaneously branching into GaN power electronics and solar PV — both applications where ion implantation is a key enabling process. The trajectory shows a company riding two waves: pushing Moore's Law further in digital chips while expanding into energy-adjacent markets where their core ion beam technology finds new demand.

IBS is moving toward both the extreme frontier of semiconductor miniaturization and the fast-growing wide bandgap power device market, positioning their ion implantation expertise where demand is highest.

How they like to work

IBS operates exclusively as a specialist participant — they have never coordinated an H2020 project, instead contributing their ion implantation expertise to large industry-led consortia. With 195 unique partners across 23 countries, they are deeply embedded in Europe's semiconductor ecosystem, particularly the ECSEL Joint Undertaking pilotline projects that typically involve 30-50 partners. This is the profile of a trusted equipment and process supplier that major chipmakers and research institutes repeatedly invite into their consortia.

IBS has collaborated with 195 distinct organizations across 23 countries, reflecting deep integration into Europe's semiconductor R&D network. Their partners span the full chip ecosystem — from large fabs and equipment makers in the ECSEL pilotlines to research institutes and university labs in power electronics projects.

What sets them apart

IBS occupies a rare niche as an independent European SME offering ion implantation services and equipment — a capability typically controlled by large multinationals. Their project portfolio demonstrates they can apply the same core technology across radically different domains: sub-3nm digital chips, SiC and GaN power devices, and solar cells. For consortium builders, IBS brings a specific, hard-to-replace process capability rather than generic R&D support, making them a high-value partner when ion beam processing is on the critical path.

Highlights from their portfolio

• YESvGaN
  Largest single EC contribution (EUR 1.18M) and signals IBS's strategic bet on vertical GaN power semiconductors — a technology expected to disrupt the power electronics market.
• IT2
  Participation in the 2nm node pilotline places IBS at the absolute frontier of semiconductor manufacturing, validating their equipment relevance for next-generation chip production.
• CHALLENGE
  Longest-running project (2017-2021) focused on 3C-SiC substrates, demonstrating sustained commitment to wide bandgap materials beyond mainstream silicon.