DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL

Their core work

Distretto Tecnologico Sicilia Micro e Nano Sistemi (DSMNS) is a Sicilian technology district specialized in wide bandgap semiconductor technologies for power electronics. Operating as a consortium coordinator based in Catania, they organize and lead multi-partner R&D projects that advance the performance, reliability, and application readiness of next-generation power semiconductors — first silicon carbide (SiC), then gallium nitride (GaN). Their work targets real-world deployment in electric vehicle on-board chargers, industrial motor drives, and photovoltaic inverters, bridging the gap between semiconductor research and industrial adoption. As a technology district, their core value is aggregating regional and European expertise — research labs, device manufacturers, and system integrators — around a focused technology roadmap.

What they specialise in

How they've shifted over time

Their H2020 trajectory follows a deliberate technology progression within the wide bandgap semiconductor family: WInSiC4AP (2017–2021) established competence in silicon carbide materials and device innovation, reflecting the dominant wide bandgap technology of that era. By 2021, with GaN4AP, the focus shifted firmly to gallium nitride — a faster-switching, lower-loss material increasingly preferred for high-frequency power conversion — and expanded scope to include specific market applications like EV charging and solar inverters. The shift from materials-level SiC research to application-driven GaN development signals a maturation from exploratory R&D toward market-ready technology validation.

They are moving toward system-level validation of GaN power devices in electromobility and renewable energy applications, making them a relevant partner for any consortium working on EV power trains, grid-connected inverters, or industrial drive efficiency.

How they like to work

DSMNS has acted exclusively as project coordinator in both of their H2020 projects — a defining characteristic that positions them as a consortium architect rather than a technical execution partner. Their ability to build a 53-partner network across 6 countries from just two projects suggests strong aggregation capability, likely drawing on the technology district's mandate to connect regional industry with European research actors. Organizations considering collaboration should expect DSMNS to propose or lead consortia rather than slot into an existing one.

DSMNS has built a network of 53 unique consortium partners across 6 countries through only 2 projects — an unusually high ratio that reflects the broad, multi-actor consortia typical of power semiconductor R&D projects. Their geographic reach extends beyond Italy but remains primarily European, consistent with the H2020 program structure.

What sets them apart

DSMNS occupies a rare niche as a coordinator-only organization with deep specialization in wide bandgap power semiconductors — a space where very few Italian research districts operate at this level of focus. Their sequential coverage of both major WBG technologies (SiC then GaN) gives them a panoramic view of the field that pure research groups or single-company labs typically lack. For a consortium builder in power electronics, cleantech, or e-mobility, they bring both technical credibility and demonstrated capacity to organize complex multi-partner projects.

Highlights from their portfolio

• GaN4AP
  Their largest project by far (EUR 1.52M, Innovation Action), GaN4AP represents a full-application push into automotive EV charging, industrial drives, and solar inverters — the three highest-growth markets for wide bandgap power devices through 2030.
• WInSiC4AP
  The foundational project that established DSMNS as a coordinator in the WBG semiconductor space, notable for launching a multi-country consortium on SiC innovation from a Sicilian regional base.