AGILE POWER SWITCH 3D - INTEGRATIONAPSI3D

Their core work

APSI3D is a French SME specializing in the 3D integration and packaging of wide bandgap power semiconductors — the class of materials (SiC and GaN) that enable faster, more efficient power conversion than conventional silicon devices. Their core work sits at the intersection of advanced semiconductor packaging and real-world power electronics applications including electric vehicle charging, industrial motor control, and photovoltaic inverters. Within EU research consortia, they contribute applied industrial expertise on component robustness, system reliability, and the transition from laboratory devices to deployable power modules. As a small company, they bring the agility of an SME combined with deep specialization in a technology area that is central to the electrification of transport and industry.

What they specialise in

How they've shifted over time

APSI3D entered H2020 through SiC-based wide bandgap research (WInSiC4AP, 2017–2021), where the emphasis was on material-level innovation — understanding and qualifying a new class of semiconductor for power applications. By 2021, their focus had shifted decisively toward GaN, a wide bandgap material better suited to high-frequency, high-efficiency switching in compact systems, with a much stronger application orientation: automotive charging, motor drives, and solar inverters now appear explicitly alongside reliability and robustness concerns. The trajectory is clear — from material exploration toward application-driven component integration, reflecting the broader industry maturation of wide bandgap power electronics from R&D curiosity to production-ready technology.

APSI3D is moving deeper into application-specific GaN integration, particularly for electromobility and renewable energy — sectors with strong industrial pull, suggesting their next engagements will likely be closer to industrial validation and product qualification than to fundamental research.

How they like to work

APSI3D has participated exclusively as a consortium partner across both projects, never taking a coordination role — a pattern consistent with a focused technical SME that contributes specific expertise rather than managing large collaborative programs. Their 53 unique partners across only 2 projects suggests they work within large, diverse consortia typical of EU Research and Innovation Actions in semiconductor and power electronics, where academic institutions, industrial manufacturers, and component specialists collaborate around shared technology roadmaps. This makes them a reliable specialist contributor rather than a consortium architect.

APSI3D has built connections with 53 unique consortium partners spanning 6 countries through just two projects, reflecting the broad, multi-actor consortia typical of EU power electronics research programs. Their geographic footprint is European, likely anchored around France and neighbouring industrial regions with strong power electronics clusters.

What sets them apart

APSI3D occupies a rare niche as an SME with hands-on expertise in both SiC and GaN wide bandgap power semiconductor integration — a technology space normally dominated by large semiconductor manufacturers or university research groups. Based in Tarbes in the French southwest, they bring industrial pragmatism to a research area that struggles to bridge the gap between device characterisation and deployable, reliable power modules. For a consortium needing an SME partner that understands the full chain from material properties to packaged power switch performance in real applications, APSI3D offers a credible and focused profile.

Highlights from their portfolio

• GaN4AP
  Their most application-rich project, explicitly targeting automotive on-board chargers, industrial motor drives, and photovoltaic inverters — demonstrating technology transfer ambition across three high-value electrification markets simultaneously.
• WInSiC4AP
  Their largest single project by EC funding (€332,894) and their entry point into EU-funded wide bandgap research, establishing the SiC foundation on which their subsequent GaN work was built.